BCW61C

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Terminal Form :

Gull wing

Turn Off Time-Max (toff) :

800ns

Vce Saturation (Max) @ Ib, Ic :

550mV @ 1.25mA, 50mA

Power Dissipation :

250mW

Max Breakdown Voltage :

32V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

20nA ICBO

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 2mA 5V

Gain Bandwidth Product :

100MHz

Transition Frequency :

100MHz

Contact Plating :

Tin

Number of Elements :

1

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

5V

Series :

Automotive, AEC-Q101

Max Power Dissipation :

250mW

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

32V

Packaging :

Tape and Reel (TR)

Additional Feature :

LOW NOISE

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

32V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Published :

2009

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

32V

Mounting Type :

Surface Mount

Base Part Number :

BCW61

Terminal Position :

Dual

Pin Count :

3

Operating Temperature :

150°C TJ

Frequency :

100MHz