BCW66HTA
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- Mfr.Part #
- BCW66HTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 1,984
- In Stock ：
- 1,984
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 700mV
- Length :
- 3mm
- Base Part Number :
- BCW66
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 800mA
- Terminal Finish :
- MATTE TIN
- Number of Pins :
- 3
- Power Dissipation :
- 330mW
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 20nA
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Continuous Collector Current :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 1.1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 75V
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 400ns
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 330mW
- Max Collector Current :
- 800mA
- Published :
- 2006
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Datasheets
- BCW66HTA
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCW66HTA Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 800mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 800mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 800mA volts.
BCW66HTA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66HTA Applications
There are a lot of Diodes Incorporated
BCW66HTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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