BD137G
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- Mfr.Part #
- BD137G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126
- Stock
- 6,892
- In Stock ：
- 6,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 1.5A
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.25W
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Current Rating :
- 6A
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Package / Case :
- TO-225AA, TO-126-3
- Length :
- 7.74mm
- Power Dissipation :
- 65W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Contact Plating :
- Tin
- hFE Min :
- 25
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 11.04mm
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Base Part Number :
- BD137
- Max Power Dissipation :
- 1.25W
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Published :
- 2001
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.66mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- BD137G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD137G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 1.5A volts at its maximum.
BD137G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 6A
BD137G Applications
There are a lot of ON Semiconductor
BD137G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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