BD13916STU

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Mfr.Part #
BD13916STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 1.5A TO126-3
Stock
169
In Stock :
169

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Collector Emitter Voltage (VCEO) :
80V
Length :
8mm
Weight :
761mg
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Factory Lead Time :
22 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Pbfree Code :
yes
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
80V
Current Rating :
1.5A
Mount :
Through Hole
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Contact Plating :
Tin
Voltage - Rated DC :
80V
Package / Case :
TO-225AA, TO-126-3
Published :
2011
Max Collector Current :
1.5A
Transistor Application :
SWITCHING
Max Power Dissipation :
1.25W
Lead Free :
Lead Free
Power Dissipation :
1.25W
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Element Configuration :
Single
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Base Voltage (VCBO) :
80V
hFE Min :
40
Height :
11mm
Base Part Number :
BD139
Number of Pins :
3
ECCN Code :
EAR99
Number of Elements :
1
Width :
3.25mm
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
500mV
Number of Terminations :
3
Mounting Type :
Through Hole
Datasheets
BD13916STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13916STU from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, Base Part Number:BD139, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, BD13916STU pinout, BD13916STU datasheet PDF, BD13916STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13916STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13916STU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BD13916STU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1.5A volts.

BD13916STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A


BD13916STU Applications


There are a lot of ON Semiconductor
BD13916STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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