BD159

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Mfr.Part #
BD159
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 350V 0.5A TO126
Stock
14,911
In Stock :
14,911

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Transistor Type :
NPN
Lead Free :
Contains Lead
Qualification Status :
Not Qualified
Package / Case :
TO-225AA, TO-126-3
Number of Terminations :
3
hFE Min :
30
Current - Collector Cutoff (Max) :
100μA ICBO
Collector Base Voltage (VCBO) :
375V
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Mounting Type :
Through Hole
Packaging :
Bulk
RoHS Status :
Non-RoHS Compliant
Peak Reflow Temperature (Cel) :
240
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
BD159
Number of Elements :
1
JESD-609 Code :
e0
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Voltage (VCEO) :
350V
Reach Compliance Code :
not_compliant
Published :
2003
Terminal Finish :
Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
30
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
350V
Voltage - Rated DC :
350V
Mount :
Through Hole
Current Rating :
500mA
Max Power Dissipation :
20W
Pin Count :
3
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Additional Feature :
High Reliability
Max Collector Current :
500mA
Transistor Application :
AMPLIFIER
Datasheets
BD159
Introducing Transistors - Bipolar (BJT) - Single onsemi BD159 from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD159, Operating Temperature:-65°C~150°C TJ, BD159 pinout, BD159 datasheet PDF, BD159 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD159 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD159


NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD159 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Collector current can be as low as 500mA volts at its maximum.

BD159 Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA


BD159 Applications


There are a lot of ON Semiconductor
BD159 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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