BD159G
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- Mfr.Part #
- BD159G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 31,747
- In Stock ：
- 31,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Voltage - Rated DC :
- 350V
- Surface Mount :
- No
- Transition Frequency :
- 6MHz
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Breakdown Voltage :
- 350V
- Base Part Number :
- BD159
- hFE Min :
- 30
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 20W
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 350V
- Collector Base Voltage (VCBO) :
- 375V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Element Configuration :
- Single
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Current Rating :
- 500mA
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 20W
- Datasheets
- BD159G
NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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