BD17516STU
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- Mfr.Part #
- BD17516STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 4,925
- In Stock ：
- 4,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 19 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 weeks ago)
- Collector Base Voltage (VCBO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Frequency :
- 3MHz
- Packaging :
- Tube
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 761mg
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Voltage - Rated DC :
- 45V
- Published :
- 2000
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 800mV
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 30W
- Qualification Status :
- Not Qualified
- hFE Min :
- 40
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 30W
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Current Rating :
- 3A
- Max Breakdown Voltage :
- 45V
- Datasheets
- BD17516STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17516STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 3A volts at its maximum.
BD17516STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17516STU Applications
There are a lot of ON Semiconductor
BD17516STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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