BD179
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- Mfr.Part #
- BD179
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A SOT32
- Stock
- 28,620
- In Stock ：
- 28,620
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 3A
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Voltage - Rated DC :
- 80V
- Width :
- 6.35mm
- Length :
- 31.75mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Max Collector Current :
- 3A
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Weight :
- 4.535924g
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 30W
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Power Dissipation :
- 30W
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 800mV
- Published :
- 2006
- REACH SVHC :
- No SVHC
- hFE Min :
- 63
- Pin Count :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- -65°C~150°C TJ
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- No
- Base Part Number :
- BD179
- Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- BD179
NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD179G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD179G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD179G Applications
There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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