BD680
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- Mfr.Part #
- BD680
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 44,228
- In Stock ：
- 44,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- Isolated
- hFE Min :
- 750
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- PNP
- Element Configuration :
- Single
- Length :
- 7.8mm
- Current Rating :
- -4A
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -80V
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 10.8mm
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 40W
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Width :
- 2.7mm
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 500μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Mount :
- Through Hole
- Transition Frequency :
- 10MHz
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Element Material :
- SILICON
- Base Part Number :
- BD680
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 40W
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- Datasheets
- BD680
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD680 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD680 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD680 Applications
There are a lot of STMicroelectronics
BD680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| BD680 | onsemi | 12,648 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680A | onsemi | 49,827 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680A | onsemi | 15,537 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680AG | onsemi | 22,377 | TRANS PNP DARL 80V 4A TO126 |
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| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680CS_L2_00001 | onsemi | 17,438 | SURFACE MOUNT SCHOTTKY BARRIER R |
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| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A SOT32-3 |
| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A TO126 |
| BD681G | onsemi | 1,440 | TRANS NPN DARL 100V 4A TO126 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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