BD681

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Mfr.Part #
BD681
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 100V 4A SOT32-3
Stock
11,848
In Stock :
11,848

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Packaging :
Tube
Collector Base Voltage (VCBO) :
100V
Transition Frequency :
10MHz
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Breakdown Voltage :
100V
Number of Pins :
3
Polarity :
NPN
Lead Free :
Lead Free
Contact Plating :
Tin
JESD-609 Code :
e3
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
100V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Element Material :
SILICON
hFE Min :
750
Width :
2.7mm
Mounting Type :
Through Hole
Continuous Collector Current :
4A
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Saturation Voltage :
2.5V
Element Configuration :
Single
Base Part Number :
BD681
Transistor Application :
SWITCHING
Power Dissipation :
40W
Voltage - Rated DC :
100V
Number of Elements :
1
Factory Lead Time :
8 Weeks
Case Connection :
Isolated
Current Rating :
4A
Max Collector Current :
4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Height :
10.8mm
Length :
7.8mm
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
500μA
Max Power Dissipation :
40W
Transistor Type :
NPN - Darlington
Datasheets
BD681
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD681 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD681, BD681 pinout, BD681 datasheet PDF, BD681 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD681 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD681


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD681 Overview


This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.

BD681 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz


BD681 Applications


There are a lot of STMicroelectronics
BD681 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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