BD682
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- Mfr.Part #
- BD682
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A SOT32-3
- Stock
- 47,727
- In Stock ：
- 47,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Type :
- PNP - Darlington
- Power Dissipation :
- 40W
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 2.5V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Packaging :
- Tube
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 4A
- hFE Min :
- 750
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Voltage - Rated DC :
- -100V
- Collector Emitter Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 4A
- Width :
- 2.7mm
- Base Part Number :
- BD682
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- Isolated
- Max Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 7.8mm
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 500μA
- Polarity :
- PNP
- Pin Count :
- 3
- Current Rating :
- -4A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Height :
- 10.8mm
- Transition Frequency :
- 10MHz
- Datasheets
- BD682
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 4A volts.
BD682 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD682 Applications
There are a lot of STMicroelectronics
BD682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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