BD682T
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- Mfr.Part #
- BD682T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126
- Stock
- 28,947
- In Stock ：
- 28,947
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 40W
- Current Rating :
- -4A
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Transition Frequency :
- 10MHz
- Voltage - Rated DC :
- -100V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Continuous Collector Current :
- 4A
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 40W
- hFE Min :
- 750
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2008
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 500μA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 240
- Base Part Number :
- BD682
- Datasheets
- BD682T
PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682T Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 10MHz.A maximum collector current of 4A volts can be achieved.
BD682T Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD682T Applications
There are a lot of ON Semiconductor
BD682T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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