BDV64A-S

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Mfr.Part #
BDV64A-S
Manufacturer
Bourns, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS PNP DARL 60V 12A SOT93
Stock
16,739
In Stock :
16,739

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
80V
Number of Pins :
3
Power - Max :
3.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
12A
Polarity :
PNP
Published :
1993
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
60V
RoHS Status :
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max) :
60V
Transistor Type :
PNP - Darlington
Package / Case :
TO-218-3
Base Part Number :
BDV64
Emitter Base Voltage (VEBO) :
5V
Mount :
Through Hole
Max Power Dissipation :
3.5W
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
2V @ 20mA, 5A
Min Operating Temperature :
-65°C
Packaging :
Tube
Current - Collector Cutoff (Max) :
2mA
Operating Temperature :
-65°C~150°C TJ
Current - Collector (Ic) (Max) :
12A
Collector Emitter Saturation Voltage :
2V
Collector Emitter Voltage (VCEO) :
80V
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Max Operating Temperature :
150°C
Supplier Device Package :
SOT-93
Datasheets
BDV64A-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDV64A-S from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-218-3, Base Part Number:BDV64, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, BDV64A-S pinout, BDV64A-S datasheet PDF, BDV64A-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDV64A-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDV64A-S


PNP - Darlington -65°C~150°C TJ 2mA 1 Elements TO-218-3 Tube Through Hole

BDV64A-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 20mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.This product comes in a SOT-93 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.

BDV64A-S Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93


BDV64A-S Applications


There are a lot of Bourns Inc.
BDV64A-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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