BDV64B
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- Mfr.Part #
- BDV64B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 12A TO218
- Stock
- 3,027
- In Stock ：
- 3,027
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 0.1MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 125W
- Radiation Hardening :
- No
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Polarity :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- Number of Terminations :
- 3
- Max Power Dissipation :
- 125W
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -100V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Current Rating :
- -10A
- Collector Emitter Voltage (VCEO) :
- 100V
- hFE Min :
- 1000
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Number of Pins :
- 3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- BDV64B
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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