BDV64B
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- Mfr.Part #
- BDV64B
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 12A TO218
- Stock
- 3,027
- In Stock ：
- 3,027
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Polarity :
- PNP
- Pbfree Code :
- yes
- Max Power Dissipation :
- 125W
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 1000
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 125W
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Current Rating :
- -10A
- Transistor Type :
- PNP - Darlington
- Max Collector Current :
- 10A
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -100V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 5A
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 0.1MHz
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- BDV64B
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.
BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz
BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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