BDX54C
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- Mfr.Part #
- BDX54C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 6,113
- In Stock ：
- 6,113
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Power Dissipation :
- 60W
- Packaging :
- Tube
- Transition Frequency :
- 20MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Height :
- 9.15mm
- Width :
- 4.6mm
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Polarity :
- PNP
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -8A
- Mount :
- Through Hole
- VCEsat-Max :
- 2 V
- Max Power Dissipation :
- 60W
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 8A
- Base Part Number :
- BDX54
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP - Darlington
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.4mm
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- hFE Min :
- 750
- Voltage - Rated DC :
- -100V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Datasheets
- BDX54C
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX54C Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 12mA, 3A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 20MHz.During maximum operation, collector current can be as low as 8A volts.
BDX54C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 20MHz
BDX54C Applications
There are a lot of STMicroelectronics
BDX54C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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