BSP50
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- Mfr.Part #
- BSP50
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 0.8A SOT223-4
- Stock
- 4,880
- In Stock ：
- 4,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 50nA
- Terminal Position :
- Dual
- Height :
- 1.6mm
- Package / Case :
- TO-261-4, TO-261AA
- Current Rating :
- 800mA
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Published :
- 1997
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Voltage - Rated DC :
- 45V
- Factory Lead Time :
- 39 Weeks
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Length :
- 6.5mm
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.3V
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Base Part Number :
- BSP50
- Width :
- 3.5mm
- Transition Frequency :
- 200MHz
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 188mg
- Mount :
- Surface Mount
- Datasheets
- BSP50
NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP50 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BSP50 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 200MHz
BSP50 Applications
There are a lot of ON Semiconductor
BSP50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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