BSP52
- Mfr.Part #
- BSP52
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.8A SOT223-4
- Stock
- 24,999
- In Stock :
- 24,999
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Voltage - Rated DC :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.56mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 1997
- Max Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 1.3V
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Base Part Number :
- BSP52
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- hFE Min :
- 2000
- Current Rating :
- 1A
- Weight :
- 188mg
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 90V
- Height :
- 1.6mm
- Max Power Dissipation :
- 1W
- Datasheets
- BSP52

NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP52 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.3V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BSP52 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BSP52 Applications
There are a lot of ON Semiconductor
BSP52 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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