BU508A
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- Mfr.Part #
- BU508A
- Manufacturer
- Motorola
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 3,637
- In Stock ：
- 3,637
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- Manufacturer :
- Motorola
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Element Configuration :
- Single
- hFE Min :
- 10
- Base Part Number :
- BU508
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 9V
- Package / Case :
- TO-247-3
- Polarity/Channel Type :
- NPN
- Width :
- 5.15mm
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Length :
- 15.75mm
- Height :
- 24.45mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Power Dissipation :
- 125W
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 125W
- Collector Emitter Breakdown Voltage :
- 700V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 700V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 200μA
- Datasheets
- BU508A
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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