BU508AF
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- Mfr.Part #
- BU508AF
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO3PF
- Stock
- 5,265
- In Stock ：
- 5,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 700V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 200μA
- Max Power Dissipation :
- 50W
- Package / Case :
- ISOWATT218FX
- Base Part Number :
- BU508
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 700V
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Power Dissipation :
- 50W
- Radiation Hardening :
- No
- Max Collector Current :
- 8A
- Datasheets
- BU508AF
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.
BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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