DP0150ALP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

-300mV

Mount :

Surface Mount

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-100mA

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Collector Base Voltage (VCBO) :

-50V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Max Power Dissipation :

450mW

Published :

2011

Element Configuration :

Single

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

REACH SVHC :

No SVHC

Gain Bandwidth Product :

80MHz

JESD-609 Code :

e4

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Pin Count :

3

Pbfree Code :

yes

Power - Max :

450mW

Transition Frequency :

80MHz

Additional Feature :

High Reliability

Transistor Type :

PNP

Number of Pins :

3

Package / Case :

3-XFDFN