DP0150BLP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Collector Emitter Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Case Connection :

COLLECTOR

Number of Pins :

3

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Max Breakdown Voltage :

50V

JESD-609 Code :

e4

Mount :

Surface Mount

Power - Max :

450mW

Collector Base Voltage (VCBO) :

-50V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

Pin Count :

3

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Emitter Base Voltage (VEBO) :

-5V

Continuous Collector Current :

-100mA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-300mV

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Package / Case :

3-XFDFN

Number of Terminations :

3

Additional Feature :

High Reliability

Transistor Type :

PNP

Terminal Position :

BOTTOM

Published :

2011

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

80MHz

Transition Frequency :

80MHz

Polarity/Channel Type :

PNP

Element Configuration :

Single

Max Power Dissipation :

450mW

Collector Emitter Voltage (VCEO) :

300mV

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO