DSC200200L

- Mfr.Part #
- DSC200200L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A MINI3
- Stock
- 17,352





- In Stock :
- 17,352
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 160MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Continuous Collector Current :
- 500mA
- Length :
- 2.9mm
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e6
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Base Part Number :
- DSC2002
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Transition Frequency :
- 160MHz
- Published :
- 2010
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.5mm
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- Packaging :
- Tape and Reel (TR)
- Max Frequency :
- 160MHz
- Max Power Dissipation :
- 200mW
- hFE Min :
- 120
- Max Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Datasheets
- DSC200200L

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSC200200L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 500mA volts.
DSC200200L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 160MHz
DSC200200L Applications
There are a lot of Panasonic Electronic Components
DSC200200L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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