FDG361N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

Transistor Element Material :

SILICON

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Power Dissipation-Max :

420mW Ta

Transistor Application :

SWITCHING

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.55Ohm

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 50V

Rds On (Max) @ Id, Vgs :

500m Ω @ 600mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.6A

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1