FSB649
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- Mfr.Part #
- FSB649
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT23-3
- Stock
- 4,209
- In Stock ：
- 4,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Collector Emitter Saturation Voltage :
- 600mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 500mW
- Transition Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 25V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Base Voltage (VCBO) :
- 35V
- Published :
- 2008
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Base Part Number :
- FSB649
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Datasheets
- FSB649
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB649 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FSB649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FSB649 Applications
There are a lot of ON Semiconductor
FSB649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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