FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 75MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2017
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- 300mV
- Width :
- 1.4mm
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Transistor Type :
- PNP
- Height :
- 940μm
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Length :
- 2.92mm
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 250
- Factory Lead Time :
- 20 Weeks
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- -60V
- Number of Pins :
- 3
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 60V
- Frequency :
- 75MHz
- Base Part Number :
- FSB660
- Current Rating :
- -2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Gain Bandwidth Product :
- 75MHz
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 30mg
- Collector Base Voltage (VCBO) :
- -60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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