FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 32,009
- In Stock ：
- 32,009
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -2A
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Published :
- 2017
- Gain Bandwidth Product :
- 75MHz
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 940μm
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Width :
- 1.4mm
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 300mV
- Factory Lead Time :
- 20 Weeks
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Transition Frequency :
- 75MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Frequency :
- 75MHz
- Length :
- 2.92mm
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- -60V
- Max Collector Current :
- 2A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- FSB660
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 250
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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