MBR20060CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Mounting Type :

Chassis Mount

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Surge Current :

1.5kA

Package / Case :

Twin Tower

Number of Terminations :

2

Diode Configuration :

1 Pair Common Anode

Max Repetitive Reverse Voltage (Vrrm) :

60V

Max Reverse Leakage Current :

1μA

JESD-30 Code :

R-PUFM-X2

Number of Elements :

2

Diode Type :

Schottky

Packaging :

Bulk

Max Operating Temperature :

175°C

Current - Average Rectified (Io) :

200A DC

Published :

2012

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Number of Contacts :

4

Diode Element Material :

SILICON

Max Voltage Rating (DC) :

600.6kV

Pitch :

4.2mm

Pbfree Code :

yes

Peak Reverse Current :

1A

Mount :

Cable, Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Orientation :

Straight

Terminal Position :

UPPER

Voltage - Forward (Vf) (Max) @ If :

750mV @ 100A

Max Reverse Voltage (DC) :

60V

Element Configuration :

Common Anode

Number of Phases :

1

Application :

Power

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Min Operating Temperature :

-40°C

Forward Current :

200A

Output Current-Max :

100A

Average Rectified Current :

200A

Factory Lead Time :

6 Weeks

Current - Reverse Leakage @ Vr :

5mA @ 20V