MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 2
- Base Part Number :
- MJ802
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Frequency :
- 2MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Current Rating :
- 30A
- Gain Bandwidth Product :
- 2MHz
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 90V
- Max Power Dissipation :
- 200W
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Package / Case :
- TO-204AA, TO-3
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 30A
- Radiation Hardening :
- No
- Pin Count :
- 2
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 90V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 25
- Terminal Form :
- PIN/PEG
- Number of Terminations :
- 2
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Power Dissipation :
- 200W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 2MHz
- Height :
- 8.51mm
- Width :
- 26.67mm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 90V
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Saturation Voltage :
- 800mV
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Packaging :
- Tray
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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