MJ802G
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- Mfr.Part #
- MJ802G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Weight :
- 4.535924g
- hFE Min :
- 25
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Width :
- 26.67mm
- Max Power Dissipation :
- 200W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 8.51mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Current Rating :
- 30A
- Frequency :
- 2MHz
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- MJ802
- Number of Terminations :
- 2
- Transition Frequency :
- 2MHz
- Voltage - Rated DC :
- 90V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 90V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 2
- Power Dissipation :
- 200W
- Number of Elements :
- 1
- Length :
- 39.37mm
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 800mV
- Published :
- 2000
- Max Collector Current :
- 30A
- Gain Bandwidth Product :
- 2MHz
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Voltage (VCEO) :
- 90V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Terminal Form :
- PIN/PEG
- Packaging :
- Tray
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- MJ802G
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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