MJD50TF
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- Mfr.Part #
- MJD50TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 1,028
- In Stock ：
- 1,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.56W
- Terminal Form :
- Gull wing
- Height :
- 2.38mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 400V
- Frequency :
- 10MHz
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Transition Frequency :
- 10MHz
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 400V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 400V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 400V
- Current Rating :
- 1A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 200μA
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 500V
- Base Part Number :
- MJD50
- Weight :
- 260.37mg
- Width :
- 6.22mm
- Polarity/Channel Type :
- NPN
- hFE Min :
- 30
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 10MHz
- Length :
- 6.73mm
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Published :
- 2012
- Power Dissipation :
- 1.56W
- Pbfree Code :
- yes
- Max Collector Current :
- 1A
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Datasheets
- MJD50TF
NPN 150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD50TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 10MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1A volts.
MJD50TF Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50TF Applications
There are a lot of ON Semiconductor
MJD50TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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