MJD50
- Mfr.Part #
- MJD50
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 28,618
- In Stock :
- 28,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -65°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Current - Collector Cutoff (Max) :
- 200μA
- Collector Base Voltage (VCBO) :
- 500V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 240
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 10MHz
- Max Power Dissipation :
- 1.56W
- Packaging :
- Tube
- Max Collector Current :
- 1A
- hFE Min :
- 30
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Saturation Voltage :
- 1V
- Current Rating :
- 1A
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MJD50
- Lead Free :
- Contains Lead
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 10MHz
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 400V
- Published :
- 2009
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Datasheets
- MJD50

NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD50 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MJD50 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50 Applications
There are a lot of ON Semiconductor
MJD50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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