MJD5731T4

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Mfr.Part #
MJD5731T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 350V 1A DPAK
Stock
28,966
In Stock :
28,966

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
1A
hFE Min :
30
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 300mA 10V
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Published :
2005
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
350V
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Length :
6.35mm
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 1A
Factory Lead Time :
8 Weeks
Number of Terminations :
2
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Width :
6.35mm
Collector Emitter Breakdown Voltage :
350V
Height :
6.35mm
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Number of Pins :
3
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Weight :
4.535924g
Current Rating :
-1A
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Frequency :
10MHz
Collector Base Voltage (VCBO) :
5V
Max Power Dissipation :
1.56W
Base Part Number :
MJD5731
Power Dissipation :
1.56W
Transition Frequency :
10MHz
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Current - Collector Cutoff (Max) :
100μA
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
1V
Voltage - Rated DC :
-350V
REACH SVHC :
No SVHC
Max Breakdown Voltage :
350V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Gain Bandwidth Product :
10MHz
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Pbfree Code :
yes
Transistor Type :
PNP
Datasheets
MJD5731T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD5731T4 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Base Part Number:MJD5731, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD5731T4 pinout, MJD5731T4 datasheet PDF, MJD5731T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD5731T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD5731T4


PNP -55°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD5731T4G Overview


In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MJD5731T4G Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz


MJD5731T4G Applications


There are a lot of ON Semiconductor
MJD5731T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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