MMBT2222LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MMBT2222

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

100

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Width :

2.64mm

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

600mA

Published :

2004

Turn Off Time-Max (toff) :

285ns

Length :

3.04mm

Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Termination :

SMD/SMT

Height :

1.11mm

Surface Mount :

yes

Contact Plating :

Tin

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

10nA ICBO

JESD-609 Code :

e3

Number of Pins :

3

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Pin Count :

3

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

1.6V

Max Power Dissipation :

225mW

Collector Emitter Voltage (VCEO) :

30V

Pbfree Code :

yes

Terminal Position :

Dual

REACH SVHC :

No SVHC

Weight :

4.535924g

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

250MHz

Polarity/Channel Type :

NPN

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

600mA

Terminal Form :

Gull wing

Number of Elements :

1

Lead Free :

Lead Free

Element Configuration :

Single

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA