MMBT2907A

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Max Collector Current :

600mA

Collector Emitter Voltage (VCEO) :

1.6V

Emitter Base Voltage (VEBO) :

-5V

Terminal Position :

Dual

Power - Max :

250mW

Transition Frequency :

200MHz

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

600mA

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Weight :

1.437803g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Turn On Time-Max (ton) :

35ns

Number of Terminations :

3

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Published :

2006

hFE Min :

100

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

JESD-609 Code :

e3

Max Power Dissipation :

350mW

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

60V

Factory Lead Time :

10 Weeks

Continuous Collector Current :

-600mA

Frequency :

200MHz

Turn Off Time-Max (toff) :

285ns

Current - Collector Cutoff (Max) :

20nA ICBO

Package / Case :

TO-236-3, SC-59, SOT-23-3