MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Saturation Voltage :
- 750mV
- Radiation Hardening :
- No
- Continuous Collector Current :
- 600mA
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Base Part Number :
- MMBT4401
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Width :
- 1.4mm
- Max Collector Current :
- 600mA
- Length :
- 3.05mm
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 250MHz
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Voltage - Rated DC :
- 40V
- Additional Feature :
- High Reliability
- Power Dissipation :
- 310mW
- Series :
- Automotive, AEC-Q101
- Max Junction Temperature (Tj) :
- 150°C
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 19 Weeks
- hFE Min :
- 40
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.1mm
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 255ns
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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