MMBT5551

Manufacturer :

MDD

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

50nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

160V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

350mW

Transistor Type :

NPN

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Configuration :

Single

Current - Collector (Ic) (Max) :

600mA

Pbfree Code :

yes

JESD-609 Code :

e3

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260