MMBTA06LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Transistor Element Material :

SILICON

Base Part Number :

MMBTA06

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Pin Count :

3

Max Collector Current :

500mA

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity/Channel Type :

NPN

Max Power Dissipation :

225mW

Height :

1.016mm

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

80V

Voltage - Rated DC :

80V

Collector Emitter Saturation Voltage :

250mV

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

80V

Element Configuration :

Single

ECCN Code :

EAR99

Width :

1.397mm

Number of Terminations :

3

Number of Elements :

1

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

4V

hFE Min :

100

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Breakdown Voltage :

80V

Length :

3.0226mm

Factory Lead Time :

4 Weeks

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Published :

2005

JESD-609 Code :

e3

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Current Rating :

500mA

Transition Frequency :

100MHz

Number of Pins :

3