MPSA06RL
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- Mfr.Part #
- MPSA06RL
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 24,861
- In Stock ：
- 24,861
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Mount :
- Through Hole
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 500mA
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 240
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Additional Feature :
- EUROPEAN PART NUMBER
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Through Hole
- Base Part Number :
- MPSA06
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 250mV
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current Rating :
- 500mA
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- hFE Min :
- 100
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- HTS Code :
- 8541.21.00.95
- Number of Elements :
- 1
- Published :
- 2009
- Datasheets
- MPSA06RL
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RL Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA06RL Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL Applications
There are a lot of ON Semiconductor
MPSA06RL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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