MPSA29

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Elements :

1

Mounting Type :

Through Hole

Factory Lead Time :

13 Weeks

Number of Pins :

3

hFE Min :

10000

Weight :

201mg

Max Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Height :

4.7mm

Base Part Number :

MPSA29

Terminal Finish :

Tin (Sn)

Length :

4.7mm

Max Collector Current :

500mA

Terminal Position :

BOTTOM

Number of Terminations :

3

Continuous Collector Current :

500mA

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

12V

Peak Reflow Temperature (Cel) :

240

Transistor Type :

NPN - Darlington

Operating Temperature :

-55°C~150°C TJ

Current Rating :

800mA

Width :

3.93mm

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

100V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

100V

Pin Count :

3

Collector Emitter Breakdown Voltage :

100V

Element Configuration :

Single

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Power Dissipation :

625mW

Transistor Application :

AMPLIFIER

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

200MHz

Lead Free :

Lead Free

Max Power Dissipation :

625mW

Collector Emitter Saturation Voltage :

1.2V

Mount :

Through Hole

JESD-609 Code :

e3

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Frequency - Transition :

125MHz

Voltage - Rated DC :

100V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Time@Peak Reflow Temperature-Max (s) :

30