MPSW01A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1W

Package / Case :

TO-226-3, TO-92-3 Long Body

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 100mA 1V

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

NPN

Voltage - Rated DC :

40V

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Type :

NPN

Reach Compliance Code :

not_compliant

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

40V

Collector Emitter Voltage (VCEO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

hFE Min :

55

Base Part Number :

MPSW01A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

Non-RoHS Compliant

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

1A

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

240

Pin Count :

3

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Current Rating :

1A

ECCN Code :

EAR99

Lead Free :

Contains Lead

Gain Bandwidth Product :

50MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Published :

2009

Number of Pins :

3

Number of Terminations :

3

Terminal Position :

BOTTOM

Power Dissipation :

1W

JESD-609 Code :

e0

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

50MHz