MPSW01AG

- Mfr.Part #
- MPSW01AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 7,151





- In Stock :
- 7,151
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- hFE Min :
- 55
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- BOTTOM
- Current Rating :
- 1A
- Voltage - Rated DC :
- 40V
- RoHS Status :
- RoHS Compliant
- Length :
- 6.35mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Transition Frequency :
- 50MHz
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Transistor Type :
- NPN
- Power Dissipation :
- 1W
- Base Part Number :
- MPSW01A
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Published :
- 2005
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Number of Pins :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 25.4mm
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Frequency :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Height :
- 6.35mm
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MPSW01AG

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01AG Overview
This device has a DC current gain of 60 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.
MPSW01AG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01AG Applications
There are a lot of ON Semiconductor
MPSW01AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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