NSVMMBT2222ATT1G

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Mfr.Part #
NSVMMBT2222ATT1G
Manufacturer
onsemi
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS NPN 40V 0.6A SC75 SOT416
Stock
6,000
In Stock :
6,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Contact Plating :
Tin
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
300MHz
Published :
2010
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Power - Max :
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Package / Case :
SC-75, SOT-416
Max Power Dissipation :
150mW
Max Collector Current :
600mA
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage :
40V
Lead Free :
Lead Free
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
75V
Collector Emitter Voltage (VCEO) :
1V
Radiation Hardening :
No
Pbfree Code :
yes
Factory Lead Time :
8 Weeks
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Datasheets
NSVMMBT2222ATT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVMMBT2222ATT1G from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SC-75, SOT-416, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, NSVMMBT2222ATT1G pinout, NSVMMBT2222ATT1G datasheet PDF, NSVMMBT2222ATT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVMMBT2222ATT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVMMBT2222ATT1G


NPN -55°C~150°C TJ SC-75, SOT-416 Tape & Reel (TR) Surface Mount

NSVMMBT2222ATT1G Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 600mA volts is possible.

NSVMMBT2222ATT1G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V


NSVMMBT2222ATT1G Applications


There are a lot of ON Semiconductor
NSVMMBT2222ATT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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