NSVMMBT2907AWT1G
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- Mfr.Part #
- NSVMMBT2907AWT1G
- Manufacturer
- onsemi
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SC70-3
- Stock
- 876
- In Stock ：
- 876
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Transition Frequency :
- 200MHz
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- -60V
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- -400mV
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Max Power Dissipation :
- 150mW
- Number of Terminations :
- 3
- Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- Power Dissipation :
- 150mW
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Turn On Time-Max (ton) :
- 45ns
- Datasheets
- NSVMMBT2907AWT1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Surface Mount
NSVMMBT2907AWT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
NSVMMBT2907AWT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
NSVMMBT2907AWT1G Applications
There are a lot of ON Semiconductor
NSVMMBT2907AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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