NTD60N02R-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

60 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Drain Current-Max (Abs) (ID) :

32A

Terminal Position :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.33pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Surface Mount :

No

Number of Elements :

1

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation-Max :

1.25W Ta 58W Tc

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.0105Ohm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 32A Tc

Drain to Source Voltage (Vdss) :

25V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

25V

Transistor Application :

SWITCHING