NTD60N02RT4G
- Mfr.Part #
- NTD60N02RT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 8.5A/32A DPAK
- Stock
- 14,012
- In Stock :
- 14,012
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Power Dissipation-Max :
- 1.25W Ta 58W Tc
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 25V
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 20A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2006
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 24V
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Ta 32A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 19 ns
- Continuous Drain Current (ID) :
- 62A
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Current Rating :
- 60A
- Rise Time :
- 33ns
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Fall Time (Typ) :
- 33 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.87W
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Datasheets
- NTD60N02RT4G

N-Channel Tape & Reel (TR) 10.5m Ω @ 20A, 10V ±20V 1330pF @ 20V 14nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N02RT4G Description
NTD60N02RT4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 25V. The operating temperature of the NTD60N02RT4G is -55°C~175°C TJ and its maximum power dissipation is 1.87W. NTD60N02RT4G has 4 pins and it available in Tape & Reel (TR) packaging way. The current rating of the NTD60N02RT4G is 60A.
NTD60N02RT4G Features
-
Planar HD3e Process for Fast Switching Performance
-
Low RDS(on) to Minimize Conduction Loss
-
Low Ciss to Minimize Driver Loss
-
Low Gate Charge
-
Optimized for High Side Switching Requirements in High?Efficiency DC?DC Converters
-
Pb?Free Packages are Available
NTD60N02RT4G Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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