NTD60N03
- Mfr.Part #
- NTD60N03
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 7,203
- In Stock :
- 7,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- TIN LEAD
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.15pF @ 24V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 28V
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 60A
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 75W Tc
- Pbfree Code :
- No
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- DS Breakdown Voltage-Min :
- 28V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 733 mJ
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Pulsed Drain Current-Max (IDM) :
- 120A
- Case Connection :
- DRAIN
- Datasheets
- NTD60N03

N-Channel Tape & Reel (TR) 7.5m Ω @ 30A, 10V ±20V 2.15pF @ 24V 30nC @ 4.5V 28V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N03T4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 733 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.15pF @ 24V.There is no drain current on this device since the maximum continuous current it can conduct is 60A.There is a peak drain current of 120A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 28V, it should remain above the 28V level.The transistor must receive a 28V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTD60N03T4 Features
the avalanche energy rating (Eas) is 733 mJ
based on its rated peak drain current 120A.
a 28V drain to source voltage (Vdss)
NTD60N03T4 Applications
There are a lot of Rochester Electronics, LLC
NTD60N03T4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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