NTE133

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - JFETs

Transistor Element Material :

SILICON

Length :

88.9 mm

Power Dissipation :

300 mW

Package :

Bag

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Terminal Form :

Wire

Package Shape :

Round

Terminal Position :

BOTTOM

JESD-30 Code :

O-PBCY-W3

Element Configuration :

Single

DS Breakdown Voltage-Min :

25 V

Transistor Application :

AMPLIFIER

Series :

-

Package / Case :

TO-106-3 Domed

Power Dissipation-Max (Abs) :

0.3 W

Max Power Dissipation :

300 mW

RoHS :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

-

Mount :

Through Hole

Subcategory :

Other Transistors

Drain to Source Voltage (Vdss) :

25 V

HTS Code :

8541.21.00.95

Supplier Device Package :

TO-106

Number of Elements :

1

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Feedback Cap-Max (Crss) :

2 pF

Breakdown Voltage :

-25 V

Max Operating Temperature :

150 °C

Voltage - Cutoff (VGS off) @ Id :

6.5 V @ 1 nA

Power - Max :

300 mW

Weight :

4.535924 g

Current - Drain (Idss) @ Vds (Vgs=0) :

500 μA @ 15 V

Height :

4.572 mm

Product Status :

Active

Configuration :

Single

Continuous Drain Current (ID) :

500 µA

Voltage - Breakdown (V(BR)GSS) :

25 V

Mounting Type :

Through Hole

Surface Mount :

No

Operating Mode :

Depletion Mode

Reach Compliance Code :

Unknown

Pin Count :

3

FET Technology :

JUNCTION

ECCN Code :

EAR99

Width :

5.2832 mm

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Terminals :

3

Drain to Source Breakdown Voltage :

-6.5 V

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

-25 V

JEDEC-95 Code :

TO-106