NTE2357

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

JESD-30 Code :

O-PBCY-T3

Terminal Position :

BOTTOM

Series :

-

Configuration :

Single

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation :

0.3(W)

Package :

Bag

Collector Current-Max (IC) :

0.1 A

Package / Case :

TO-226-3, TO-92-3 Short Body

DC Current Gain-Min (hFE) :

50

Package Shape :

Round

Frequency - Transition :

250 MHz

Collector Current (DC) :

0.2(A)

Collector-Emitter Voltage-Max :

50 V

Typical Resistor Ratio :

1

Power Dissipation-Max (Abs) :

0.3 W

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Type :

NPN

Pin Count :

3

DC Current Gain :

50

Power - Max :

300 mW

Mounting Type :

Through Hole

Resistor - Emitter Base (R2) :

22 kOhms

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Package Type :

TO-92

Subcategory :

BIP General Purpose Small Signal

Supplier Device Package :

TO-92S

Emitter-Collector Voltage (Max) :

50(V)

Reach Compliance Code :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

NTE Electronics

Surface Mount :

No

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Resistor - Base (R1) :

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Product Status :

Active

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED