NTE3311

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

400ns/500ns

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Pin Count :

3 +Tab

Fall Time-Max (tf) :

350 ns

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Test Condition :

-

Mounting :

Through Hole

Power - Max :

150 W

Case Connection :

COLLECTOR

Operating Temperature (Max) :

150C

Current - Collector Pulsed (Icm) :

50 A

Input Type :

Standard

Power Dissipation-Max (Abs) :

150 W

Configuration :

Single

Collector Current-Max (IC) :

25 A

Mounting Type :

Through Hole

Channel Type :

N

Series :

-

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

600 V

Vce(on) (Max) @ Vge, Ic :

4V @ 15V, 25A

Surface Mount :

No

Terminal Position :

Single

Operating Temperature (Min) :

-55C

Operating Temperature :

150°C (TJ)

Collector Current (DC) :

25(A)

Transistor Element Material :

SILICON

Operating Temperature Classification :

Military

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

600 V

Package :

Bag

Transistor Application :

Motor Control

Package Type :

TO-3P

Switching Energy :

-

Gate-Emitter Voltage-Max :

20 V

Rad Hardened :

No

Subcategory :

Insulated Gate BIP Transistors

Package / Case :

TO-3P-3, SC-65-3

Supplier Device Package :

TO-3P

Current - Collector (Ic) (Max) :

25 A

Number of Terminals :

3

Gate to Emitter Voltage (Max) :

±20(V)

Product Status :

Active

Manufacturer :

NTE Electronics

IGBT Type :

-

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR