NTE377

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

50 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Output Power :

Not Required(W)

Voltage - Collector Emitter Breakdown (Max) :

80 V

Weight :

7.257478 g

DC Current Gain-Min (hFE) :

40

JESD-30 Code :

R-PSFM-T3

Pin Count :

3 +Tab

DC Current Gain :

60

Collector Current-Max (IC) :

10 A

Min Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

Terminal Position :

Single

Transistor Type :

NPN

Case Connection :

COLLECTOR

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 2A, 1V

Schedule B :

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Supplier Device Package :

TO-220

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Current - Collector (Ic) (Max) :

10 A

Surface Mount :

No

HTS Code :

8541.29.00.75

Rad Hardened :

No

Frequency :

50(MHz)

Height :

15.494 mm

Manufacturer :

NTE Electronics

Mounting :

Through Hole

Reach Compliance Code :

Unknown

Power - Max :

1.67 W

Package / Case :

TO-220-3

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Subcategory :

Other Transistors

Frequency - Transition :

50MHz

Operating Temperature Classification :

Military

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

10μA

RoHS :

Compliant

Max Power Dissipation :

50 W

Qualification Status :

Not Qualified

Operating Temp Range :

-55C to 150C

Transistor Polarity :

NPN

Category :

Bipolar Power

Series :

-

Number of Terminals :

3

Emitter Base Voltage (VEBO) :

5 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Polarity :

NPN

Power Dissipation :

1.67(W)

Collector Emitter Saturation Voltage :

1 V

Number of Pins :

3

Max Operating Temperature :

150 °C

Collector Emitter Voltage (VCEO) :

80 V

Product Status :

Active

Collector-Emitter Voltage-Max :

80 V

Mount :

Through Hole

Length :

10.668 mm

Package Shape :

RECTANGULAR

Collector Current (DC) :

10(A)

Transistor Element Material :

SILICON

Width :

76.2 mm

Package Type :

TO-220

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80 V

Transition Frequency :

50 MHz

Power Dissipation Ambient-Max :

50 W

Emitter-Base Voltage :

5(V)

Mounting Type :

Through Hole

Max Collector Current :

10 A

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC