PN2907ABU
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- Mfr.Part #
- PN2907ABU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 3,597
- In Stock ：
- 3,597
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Gain Bandwidth Product :
- 200MHz
- Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 400mV
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Polarity/Channel Type :
- PNP
- Height :
- 4.7mm
- Transistor Type :
- PNP
- Turn On Time-Max (ton) :
- 45ns
- Pbfree Code :
- yes
- Factory Lead Time :
- 7 Weeks
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -800mA
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.93mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Weight :
- 179mg
- Length :
- 4.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lead Free :
- Lead Free
- Published :
- 2007
- Voltage - Rated DC :
- -60V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Code :
- EAR99
- Base Part Number :
- PN2907A
- Max Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -60V
- Transition Frequency :
- 200MHz
- Max Collector Current :
- 800mA
- Datasheets
- PN2907ABU
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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